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MC68HC05B4 Datasheet, PDF (213/298 Pages) Motorola, Inc – High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit
Table E-10 A/D characteristics for 3.3V operation
(VDD = 3.3 Vdc ± 10%, VSS = 0 Vdc, TA = TL to TH)
Characteristic
Parameter
Min
Max
Unit
Resolution
Number of bits resolved by the A/D
8
—
Bit
Non-linearity
Quantization error
Max deviation from the best straight line through the A/D
transfer characteristics
—
(VRH = VDD and VRL = 0V)
Uncertainty due to converter resolution
—
±1
LSB
±1
LSB
Absolute accuracy
Difference between the actual input voltage and the
full-scale equivalent of the binary code output code for all —
errors
±2
LSB
Conversion range
VRH
VRL
∆VR
Conversion time
Analog input voltage range
V RL
VRH
V
Maximum analog reference voltage
V RL
VDD + 0.1
V
Minimum analog reference voltage
V SS – 0.1
VRH
V
Minimum difference between V RH and VRL
3
—
V
Total time to perform a single analog to digital conversion
Internal RC oscillator
—
32
µs
Monotonicity
Conversion result never decreases with an increase in
input voltage and has no missing codes
GUARANTEED
Zero input reading
Full scale reading
Sample acquisition time
Conversion result when VIN = VRL
Conversion result when VIN = VRH
Analog input acquisition sampling
Internal RC oscillator(1)
00
—
Hex
—
FF
Hex
—
12
µs
Sample/holdcapacitance Input capacitance on PD0/AN0–PD7/AN7
—
Input leakage(2)
Input leakage on A/D pins PD0/AN0–PD7/AN7,VRL,VRH —
12
pF
1
µA
(1) Source impedances greater than 10kΩ will adversely affect internal charging time during input sampling.
(2) The external system error caused by input leakage current is approximately equal to the product of R source and input
current. Input current to A/D channel will be dependent on external source impedance (see Figure 8-2).
MC68HC05B6
Rev. 4
MC68HC705B16
14
TPG
MOTOROLA
E-25