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MC68HC05B4 Datasheet, PDF (207/298 Pages) Motorola, Inc – High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit
E.4.4 RAM parallel bootstrap
The program first checks the state of the security bit. If the SEC bit is active, i.e. ‘0’, the program
will not enter the RAM bootstrap mode and the red LED will flash. Otherwise the RAM bootstrap
program will start loading the RAM with external data (e.g. from a 2564 or 2764 EPROM). Before
loading a new byte the state of the PD4/AN4 pin is checked. If this pin goes to level ‘0’, or if the
RAM is full, then control is given to the loaded program at address $0050. See Figure E-3 and
Figure E-4.
If the data is supplied by a parallel interface, handshaking will be provided by PC5 and PC6
according to Figure E-9. If the data comes from an external EPROM, the handshake can be
disabled by connecting together PC5 and PC6.
Figure E-10 provides a schematic diagram of a circuit that can be used to load the RAM with short
test programs. Up to 8 programs can be loaded in turn from the EPROM. Selection is
accomplished by means of the switches connected to the EPROM higher address lines (A8
through A10). If the user program sets PC0 to level ‘1’, this will disable the external EPROM, thus
rendering both port A output and port B input available. The EPROM parallel bootstrap loader
schematic can also be used (Figure E-7), provided VPP is at VDD level. The high order address
lines will be at zero. The LEDs will stay off.
tCR
Address
PC5 out
tHO
tADR
tDHR
Data
PC6 in
tHI max
PD4
tEXR max
tADR max (address to data delay; PC6=PC5)
tDHR min (data hold time)
tCR (load cycle time; PC6=PC5)
tHO (PC5 handshake out delay)
tHI max (PC6 handshake in, data hold time)
tEXR max (max delay for transition to be recognised during this cycle; PC6=PC5
1 machine cycle = 1/(2f0(Xtal))
16 machine cycles
4 machine cycles
49 machine cycles
5 machine cycles
10 machine cycles
30 machine cycles
Figure E-9 Parallel RAM loader timing diagram
14
MC68HC05B6
Rev. 4
MC68HC705B16
TPG
MOTOROLA
E-19