MC68HC05B4 Datasheet, PDF (208/298 Pages) Motorola, Inc – High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit

E.4.4.1 Jump to start of RAM ($0050)
PD4 must be high during the first 49 program cycles and pulled low before the 68th cycle for
immediate jump execution at address $0050.
100kΩ
1N914
RESET
1kΩ
0.01µF
+5V
1 26 27 28
VPP NC PGM VCC
20
23
2
CE
A11
A12
U1
2764
+5V
3 x 4.7kΩ
25 _A8
24 _A9
21 _A10
10
A0
A1
A2
A3
A4
A5
A6
A7
9
8
7
6
5
4
3
D0
D1
D2
D3
D4
D5
D6
D7
11
12
13
15
16
17
18
19
GND OE
14
22
RUN
1N914
100µF ⁺
P1 ¹
2
GND
+5V
1.0µF
+
TCAP1
IRQ
RESET
VDD
OSC1
OSC2
22pF
4.0 MHz
22pF
PD4
VPP6
U2MC68HC705B16
MCU (socket)
16 x 100kΩ
VPP1
NC
TCAP2
TCMP2
TCMP1
PLMB
PLMA
SCLK
PB0
TDO
PB1
RDI
PB2
VRH
PB3
PB4
PB5
VRL
PD7
PB6
PD6
PB6
PD5
PB7
PD3
PD2
PA0
PD1
PA1
PD0
PA2
PC7
PA3
PC6
PA4
PC5
PA5
PC4
PA6
PC3
PA7
PC2
PC1
PC0
VSS
+5V
18 x 100 kΩ
14
Figure E-10 RAM parallel bootstrap schematic diagram
MOTOROLA
E-20
MC68HC705B16
TPG
MC68HC05B6
Rev. 4