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| MC68HC05B4 Datasheet, PDF (242/298 Pages) Motorola, Inc – High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit | |||
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External
signal
(TCAP1,
TCAP2)
tTLTL
tTH
tTL
Figure F-10 Timer relationship
F.10
EPROM electrical characteristics
Table F-13 DC electrical characteristics for 5V operation
(VDD = 5 Vdc ± 10%, VSS = 0 Vdc, TA = 25°C)
Characteristic(1)
Symbol Min
Typ (2)
Max
Unit
EPROM
Absolute maximum voltage
Programming voltage
Programming current
Read voltage
VPP6 max VDD
VPP6
15
IPP6
â
VPP6R
VDD
â
18
V
15.5
16
V
50
64
mA
VDD
VDD
V
(1) All IDD measurements taken with suitable decoupling capacitors across the power supply to suppress the
transient switching currents inherent in CMOS designs (see Section 2).
(2) Typical values are at mid point of voltage range and at 25°C only.
Table F-14 Control timing for 5V operation
(VDD = 5.0 Vdc ± 10%, VSS = 0 Vdc, TA = 25°C)
Characteristic
Symbol Min
EPROM programming time
t PROG
5
Max Unit
20
ms
Table F-15 Control timing for 3.3V operation
(VDD = 3.3 Vdc ± 10%, VSS = 0 Vdc, TA = 25°C)
Characteristic
Symbol Min
EPROM programming time
t PROG
5
Max Unit
20
ms
14
MOTOROLA
F-26
MC68HC705B16N
TPG
MC68HC05B6
Rev. 4
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