MC68HC05B4 Datasheet, PDF (256/298 Pages) Motorola, Inc – High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit

E1LAT — EEPROM programming latch enable bit
Preliminary 1 (set) – Address and data can be latched into the EEPROM for further
program or erase operations, providing the E1PGM bit is cleared.
0 (clear) – Data can be read from the EEPROM.The E1ERA bit and the E1PGM
bit are reset to zero when E1LAT is ‘0’.
STOP, power-on and external reset clear the E1LAT bit.
Note:
After the t_ERA1 erase time or t_PROG1 programming time, the E1LAT bit has to be reset
to zero in order to clear the E1ERA bit and the E1PGM bit.
E1PGM — EEPROM charge pump enable/disable
1 (set) – Internal charge pump generator switched on.
0 (clear) – Internal charge pump generator switched off.
When the charge pump generator is on, the resulting high voltage is applied to the EEPROM array.
Preliminary ^{This bit cannot be set before the data is selected, and once this bit has been set it can only be}
cleared by clearing the E1LAT bit.
A summary of the effects of setting/clearing bits 0, 1 and 2 of the control register are given in Table H-3.
Table H-3 EEPROM control bits description
E1ERA
0
0
0
1
E1LAT E1PGM
0
0
1
0
1
1
1
0
Description
Read condition
Ready to load address/data for program/erase
Byte programming in progress
Ready for byte erase (load address)
1
1
1 Byte erase in progress
Note:
14
Preliminary ^{The E1PGM and E1ERA bits are cleared when the E1LAT bit is at zero.}
MOTOROLA
H-10
MC68HC705B32
TPG
MC68HC05B6
Rev. 4