MC68HC05B4 Datasheet, PDF (174/298 Pages) Motorola, Inc – High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit

RESET
RUN 1N914
100kΩ
1kΩ
1N914
1.0µF
+
TCAP1 VRH VDD
IRQ
OSC1
RESET OSC2
0.01µF
red LED
470Ω
470Ω
green LED
red LED — programming failed
green LED — programming OK
NC
TCMP1
TCMP2
PLMA
PLMB
RDI
VRL
TCAP2
PD7
PD6
PD5
PD3
PD2
PD1
PD0
100µF +
P1 1
2
3
GND
+5V
V_PP
10MΩ
47µF ₊
22pF
4.0 MHz
22pF
+5V
1 26 27 28
VPP NC PGM VCC
20 _CE
27C64
25
24
21
23
2
A8
A9
A10
A11
A12
10
A0
A1
A2
A3
A4
A5
A6
A7
9
8
7
6
5
4
3
D0
D1
D2
D3
D4
D5
D6
D7
11
12
13
15
16
17
18
19
GND OE
14
22
MC68HC705B5
PD4
RAM
EPROM
1 kΩ
TDO
SCLK
PB0
PB1
PB2
PB3
PB4
PB5
PB6
PB7
VPP6
PC7
PA0
PA1
PA2
PA3
PA4
PC5
PC6
PA5
PA6
PA7
PC4
PC3
PC2
PC1
VSS ^PC0
10 kΩ
4k7Ω
4k7Ω
12 kΩ
BC239C
1nF ⁺
+5V
100 kΩ
HDSK out
Short circuit if
handshake not used
A12 ^{HDSK in}
A11
A10
A9
A8
14
Note:
This circuit is recommended for programming only at 25°C and not for use in the
end application, or at temperatures other than 25°C. If used in the end application,
VPP6 should be tied to VDD to avoid damaging the device.
Figure C-6 EPROM(RAM) parallel bootstrap schematic diagram
MOTOROLA
C-12
MC68HC705B5
TPG
MC68HC05B6
Rev. 4