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MC68HC908LJ24 Datasheet, PDF (74/464 Pages) Motorola, Inc – Microcontrollers
FLASH Memory (FLASH)
4.7 FLASH Program Operation
Programming of the FLASH memory is done on a row basis. A row
consists of 64 consecutive bytes starting from addresses $xx00, $xx40,
$xx80, or $xxC0. Use the following procedure to program a row of
FLASH memory. (Figure 4-3 shows a flowchart of the programming
algorithm.)
NOTE:
NOTE:
1. Set the PGM bit. This configures the memory for program
operation and enables the latching of address and data for
programming.
2. Read the FLASH block protect register.
3. Write any data to any FLASH address within the row address
range desired.
4. Wait for a time, tnvs (10µs).
5. Set the HVEN bit.
6. Wait for a time, tpgs (5µs).
7. Write data to the FLASH address to be programmed.
8. Wait for time, tprog (30µs).
9. Repeat steps 7 and 8 until all bytes within the row are programmed.
10. Clear the PGM bit.
11. Wait for time, tnvh (5µs).
12. Clear the HVEN bit.
13. After time, trcv (1µs), the memory can be accessed in read mode
again.
This program sequence is repeated throughout the memory until all data
is programmed.
The time between each FLASH address change (step 7 to step 7), or the
time between the last FLASH addressed programmed to clearing the
PGM bit (step 7 to step 10), must not exceed the maximum programming
time, tprog max.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps.
Data Sheet
74
FLASH Memory (FLASH)
MC68HC908LJ24/LK24 — Rev. 2.1
Freescale Semiconductor