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MC68HC908LJ24 Datasheet, PDF (73/464 Pages) Motorola, Inc – Microcontrollers
FLASH Memory (FLASH)
FLASH Mass Erase Operation
4.6 FLASH Mass Erase Operation
Use the following procedure to erase the entire FLASH memory:
1. Set both the ERASE bit and the MASS bit in the FLASH control
register.
2. Read the FLASH block protect register.
3. Write any data to any FLASH address within the FLASH memory
address range.
4. Wait for a time, tnvs (10µs).
5. Set the HVEN bit.
6. Wait for a time tmerase (4ms).
7. Clear the ERASE bit.
8. Wait for a time, tnvh1 (100µs).
9. Clear the HVEN bit.
10. After time, trcv (1µs), the memory can be accessed again in read
mode.
NOTE:
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory; the code must be
executed from RAM. While these operations must be performed in the
order as shown, but other unrelated operations may occur between the
steps.
MC68HC908LJ24/LK24 — Rev. 2.1
Freescale Semiconductor
FLASH Memory (FLASH)
Data Sheet
73