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MC68HC908LJ24 Datasheet, PDF (450/464 Pages) Motorola, Inc – Microcontrollers
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Electrical Specifications
24.18 FLASH Memory Characteristics
Table 24-16. FLASH Memory Electrical Characteristics
Characteristic
Symbol
Min.
Max.
Unit
RAM data retention voltage
Number of rows per page
VRDR
1.3
—
2
V
Rows
Number of bytes per page
128
Bytes
Read bus clock frequency
Page erase time
Mass erase time
PGM/ERASE to HVEN setup time
High-voltage hold time
High-voltage hold time (mass erase)
Program hold time
Program time
Address/data setup time
Address/data hold time
Recovery time
Cumulative HV period
Row erase endurance(6)
fread(1)
32k
terase(2)
1
tmerase(3)
4
tnvs
10
tnvh
5
tnvhl
100
tpgs
5
tprog
30
tads
—
tadh
—
trcv(4)
1
thv(5)
—
—
10 k
8M
Hz
—
ms
—
ms
—
µs
—
µs
—
µs
—
µs
40
µs
30
ns
30
ns
—
µs
25
ms
—
Cycles
Row program endurance(7)
—
10 k
—
Cycles
Data retention time(8)
—
10
—
Years
Notes:
1. fread is defined as the frequency range for which the FLASH memory can be read.
2. If the page erase time is longer than terase (Min.), there is no erase-disturb, but it reduces the endurance of the FLASH
memory.
3. If the mass erase time is longer than tmerase (Min.), there is no erase-disturb, but is reduces the endurance of the FLASH
memory.
4. It is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clearing
HVEN to logic 0.
5. thv is the cumulative high voltage programming time to the same row before next erase, and the same address can not be
programmed twice before next erase.
6. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
erase/program cycles.
7. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
erase/program cycle.
8. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum time
specified.
Data Sheet
450
Electrical Specifications
MC68HC908LJ24/LK24 — Rev. 2.1
Freescale Semiconductor
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