MC68HC908JB8 Datasheet, PDF (57/286 Pages) Motorola, Inc – MICROCONTROLLERS

FLASH Memory
FLASH Mass Erase Operation
4.6 FLASH Mass Erase Operation
Use the following procedure to erase the entire FLASH memory:
1. Set both the ERASE bit and the MASS bit in the FLASH control
register.
2. Write any data to any FLASH address within the address range
$FFE0–$FFFF.
3. Wait for a time, t_nvs (5 µs).
4. Set the HVEN bit.
5. Wait for a time t_me (2 ms).
6. Clear the ERASE bit.
7. Wait for a time, t_nvh1 (100 µs).
8. Clear the HVEN bit.
9. After time, t_rcv (1 µs), the memory can be accessed in read mode
again.
NOTE:
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
MC68HC908JB8•MC68HC08JB8•MC68HC08JT8 — Rev. 2.3
Freescale Semiconductor
FLASH Memory
Technical Data
57