MC68HC908JB8 Datasheet, PDF (261/286 Pages) Motorola, Inc – MICROCONTROLLERS

Electrical Specifications
Memory Characteristics
18.13 Memory Characteristics
Characteristic
RAM data retention voltage
FLASH block size
FLASH programming size
FLASH read bus clock frequency
FLASH block erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN set up time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program hv period
FLASH row erase endurance⁽⁶⁾
FLASH row program endurance⁽⁷⁾
FLASH data retention time⁽⁸⁾
Symbol
V_RDR
—
—
f_Read(1)
t_Erase(2)
t_MErase(3)
t_nvs
t_nvh
t_nvhl
t_pgs
t_PROG
t_rcv(4)
t_HV(5)
—
—
—
Min
Max
1.3
—
512
64
32 k
8.4 M
2
—
2
—
5
—
5
—
100
—
10
—
20
—
1
—
—
25
10 k
—
10 k
—
10
—
Unit
V
Bytes
Bytes
Hz
ms
ms
µs
µs
µs
µs
µs
µs
ms
Cycles
Cycles
Years
NOTES:
1. f_READ is defined as the frequency range for which the FLASH memory can be read.
2. If the page erase time is longer than t_Erase (Min), there is no erase-disturb, but it reduced the endurance of the flash memory
3. If the mass erase time is longer than t_MErase (Min), there is no erase-disturb, but it reduced the endurance of the flash mem-
ory
4. t_rcv is defined as the time it need before start the read of the flash after turn off the HVEN bit
5. t_HV is defined as the cumulative high voltage programming time to the same row before next erase
6. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
erase / program cycles.
7. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
erase / program cycles.
8. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum time speci-
fied.
MC68HC908JB8•MC68HC08JB8•MC68HC08JT8 — Rev. 2.3
Freescale Semiconductor
Electrical Specifications
Technical Data
261