MC68HC908JB8 Datasheet, PDF (55/286 Pages) Motorola, Inc – MICROCONTROLLERS

FLASH Memory
FLASH Control Register
4.4 FLASH Control Register
The FLASH control register (FLCR) controls FLASH program and erase
operations.
Address: $FE08
Bit 7
6
5
4
3
2
1
Bit 0
Read: 0
0
0
0
HVEN MASS ERASE PGM
Write:
Reset: 0
0
0
0
0
0
0
0
Figure 4-2. FLASH Control Register (FLCR)
HVEN — High Voltage Enable Bit
This read/write bit enables high voltage from the charge pump to the
memory for either program or erase operation. It can only be set if
either PGM or ERASE is high and the sequence for erase or
program/verify is followed.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
MASS — Mass Erase Control Bit
This read/write bit configures the memory for mass erase operation or
block erase operation when the ERASE bit is set.
1 = Mass Erase operation selected
0 = Block Erase operation selected
ERASE — Erase Control Bit
This read/write bit configures the memory for erase operation. This bit
and the PGM bit should not be set to 1 at the same time.
1 = Erase operation selected
0 = Erase operation not selected
PGM — Program Control Bit
This read/write bit configures the memory for program operation. This
bit and the ERASE bit should not be set to 1 at the same time.
1 = Program operation selected
0 = Program operation not selected
MC68HC908JB8•MC68HC08JB8•MC68HC08JT8 — Rev. 2.3
Freescale Semiconductor
FLASH Memory
Technical Data
55