MC908AP32CFBE Datasheet, PDF (46/324 Pages) Freescale Semiconductor, Inc – The following revision history table summarizes changes contained in this document. For your convenience, the page number designators have been linked to the appropriate location.

Memory
1
Algorithm for programming
a row (64 bytes) of FLASH memory
Set PGM bit
2 _{Write any data to any FLASH address}
within the row address range desired
3
Wait for a time, t_nvs
4
Set HVEN bit
5
Wait for a time, t_pgs
6
Write data to the FLASH address
to be programmed
7
Wait for a time, t_prog
Completed
programming
Y
this row?
N
9
NOTE:
The time between each FLASH address change (step 6 to step 6), or
the time between the last FLASH address programmed
10
to clearing PGM bit (step 6 to step 9)
must not exceed the maximum programming
time, t_PROG max.
11
This row program algorithm assumes the row/s
to be programmed are initially erased.
12
Clear PGM bit
Wait for a time, t_nvh
Clear HVEN bit
Wait for a time, t_rcv
End of Programming
Figure 2-4. FLASH Programming Flowchart
MC68HC908AP Family Data Sheet, Rev. 4
46
Freescale Semiconductor