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MC908AS60ACFU Datasheet, PDF (375/414 Pages) Freescale Semiconductor, Inc – M68HC08 Microcontrollers
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Electrical Specifications
28.1.14 FLASH Memory Characteristics
Characteristic
Symbol
Min
Max
Unit
FLASH Program Bus Clock Frequency
—
1
—
MHz
FLASH Read Bus Clock Frequency
fREAD(1)
32K
8.4M
Hz
FLASH Page Erase Time
FLASH Mass Erase Time
FLASH PGM/ERASE to HVEN Set Up Time
FLASH High Voltage Hold Time
FLASH High Voltage Hold Time (Mass)
FLASH Program Hold Time
FLASH Program Time
tERASE(2)
1
—
ms
tMERASE(3)
4
—
ms
tNVS
10
—
μs
tNVH
5
—
μs
tNVHL
100
—
μs
tPGS
5
—
μs
tPROG
30
40
μs
FLASH Return to Read Time
FLASH Cumulative Program HV Period
FLASH Row Erase Endurance(6)
tRCV(4)
tHV(5)
1
μs
—
4
ms
10,000
—
cycles
FLASH Row Program Endurance(7)
10,000
—
cycles
FLASH Data Retention Time(8)
10
—
years
1. fREAD is defined as the frequency range for which the FLASH memory can be read.
2. If the page erase time is longer than tERASE(MIN), there is no erase-disturb, but it reduces the endurance of the FLASH memory.
3. If the mass erase time is longer than tMERASE(MIN), there is no erase-disturb, but it reduces the endurance of the FLASH memory.
4. tRCV is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump by clearing HVEN to logic 0.
5. tHV is defined as the cumulative high voltage programming time to the same row before next erase. tHV must satisfy this condition:
tNVS+ tNVH + tPGS + (tPROGX 64) ≥ tHV max.
6. The minimum row erase endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many erase cycles.
7. The minimum row program endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many program
cycles.
8. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum time specified.
MC68HC908AZ60A • MC68HC908AS60A • MC68HC908AS60E Data Sheet, Rev. 6
Freescale Semiconductor
375
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