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MC68HC16Z1CAG16 Datasheet, PDF (294/500 Pages) Freescale Semiconductor, Inc – M68HC16Z Series users manual
Freescale Semiconductor, Inc.
Table A-11 Low Voltage 16.78-MHz DC Characteristics
(VDD and VDDSYN = 2.7 to 3.6Vdc, VSS = 0 Vdc, TA = TL to TH)
Num
Characteristic
Symbol Min
Max Unit
1 Input High Voltage
VIH 0.7 (VDD) VDD + 0.3 V
2 Input Low Voltage
3 Input Hysteresis1
4
Input Leakage Current 2
Vin = VDD or VSS Input-only pins
5
High Impedance (Off-State) Leakage Current2
Vin = VDD or VSS All input/output and output pins
6
CMOS Output High Voltage2, 3
IOH = –10.0 µA Group 1, 2, 4 input/output and output pins
7
CMOS Output Low Voltage2
IOL = 10.0 µA
Group 1, 2, 4 input/output and output pins
8
Output High Voltage2, 3
IOH = –0.4 mA Group 1, 2, 4 input/output and output pins
VIL
VHYS
Iin
VSS – 0.3 0.2 (VDD) V
0.5
—
V
–2.5
2.5
µA
IOZ
–2.5
2.5
µA
VOH VDD –0.2
—
V
VOL
—
0.2
V
VOH VDD –0.5
—
V
Output Low Voltage2
9
IOL = 0.8 mA Group 1 I/O pins, CLKOUT, FREEZE/QUOT, IPIPE0
IOL = 2.6 mA Group 2 and group 4 I/O pins, CSBOOT, BG/CS
VOL
—
—
IOL = 6 mA Group 3
—
0.4
0.4
V
0.4
10 Three State Control Input High Voltage
Data Bus Mode Select Pull-up Current 4
11
Vin = VIL
Vin = VIH
VDD Supply Current5
Run6
12
LPSTOP, 4.194 MHz crystal, VCO Off (STSIM = 0)7
LPSTOP, 32.768 kHz crystal, VCO Off (STSIM = 0)7
LPSTOP, external clock input frequency = max fsys
WAIT8
VIHTSC
7.2
IMSP
—
–8
IDD
SIDD
—
SIDD
—
SIDD
—
WIDD
—
9.1
V
–95
µA
—
50
mA
2
mA
260
µA
3.0
mA
23
mA
13 Clock Synthesizer Operating Voltage
VDDSYN
2.7
MC68CM16Z1VDDSYN Supply Current4
VCO on, crystal reference, maximum fsys7
—
14 External clock, maximum fsys
IDDSYN
—
LPSTOP, 4.194 MHz crystal reference, VCO off (STSIM = 0)7
—
VDD powered down
—
MC68CK16Z1/Z4 VDDSYN Supply Current4
VCO on, crystal reference, maximum fsys7
—
14A External clock, maximum fsys
IDDSYN
—
LPSTOP, 32.768 kHz crystal reference, VCO off (STSIM = 0)7
—
32.768 kHz, VDD powered down
—
RAM Standby Voltage9
15 Specified VDD applied
VDD = VSS
VSB
0.0
2.7
MC68CK16Z1/Z4 RAM Standby Current4, 9, 10
16
Normal RAM operation
Transient condition
VDD > VSB – 0.5 V
VSB – 0.5 V ≥ VDD ≥ VSS + 0.5 V
Standby operation
VDD < VSS + 0.5 V
ISB
—
—
—
3.6
V
2
mA
2.5
mA
2
mA
2
mA
655
µA
2.5
mA
150
µA
70
µA
VDD
V
3.6
10
µA
3
mA
50
µA
A-10
ELECTRICAL CHARACTERISTICS
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M68HC16 Z SERIES
USER’S MANUAL