MC9S08QG8 Datasheet, PDF (278/300 Pages) Freescale Semiconductor, Inc – 8-BIT HCS08 Central Processor Unit

Appendix A Electrical Characteristics
A.12 EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the
MCU resides. Board design and layout, circuit topology choices, location and characteristics of external
components as well as MCU software operation all play a significant role in EMC performance. The
system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263,
AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance.
A.12.1 Radiated Emissions
Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell
method in accordance with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed
with the microcontroller installed on a custom EMC evaluation board while running specialized EMC test
software. The radiated emissions from the microcontroller are measured in a TEM cell in two package
orientations (North and East).
The maximum radiated RF emissions of the tested configuration in all orientations are less than or equal
to the reported emissions levels.
Table A-15. Radiated Emissions, Electric Field
Parameter
Symbol Conditions
Frequency
f_OSC/f_BUS
Level¹
(Max)
Unit
Radiated emissions,
electric field
V_{RE_TEM}
V_DD = 3.3 V
T_A = +25^oC
package type
16 TSSOP
0.15 – 50 MHz
50 – 150 MHz
150 – 500 MHz
500 – 1000 MHz
IEC Level
SAE Level
4-MHz crystal
10-MHz bus
TBD
TBD
TBD
TBD
TBD
TBD
dBµV
—
—
1 _{Data based on qualification test results.}
A.12.2 Conducted Transient Susceptibility
Microcontroller transient conducted susceptibility is measured in accordance with an internal Freescale
test method. The measurement is performed with the microcontroller installed on a custom EMC
evaluation board and running specialized EMC test software designed in compliance with the test method.
The conducted susceptibility is determined by injecting the transient susceptibility signal on each pin of
the microcontroller. The transient waveform and injection methodology is based on IEC 61000-4-4
(EFT/B). The transient voltage required to cause performance degradation on any pin in the tested
configuration is greater than or equal to the reported levels unless otherwise indicated by footnotes below
Table A-16.
MC9S08QG8 and MC9S08QG4 Data Sheet, Rev. 1.01
278
Freescale Semiconductor