MC9S08QG8 Datasheet, PDF (277/300 Pages) Freescale Semiconductor, Inc – 8-BIT HCS08 Central Processor Unit

Appendix A Electrical Characteristics
A.11 FLASH Specifications
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal V_DD supply.
For more detailed information about program/erase operations, see the Memory section.
Table A-14. FLASH Characteristics
Characteristic
Symbol
Min
Typical
Max
Unit
Supply voltage for program/erase
-40°C to 85°C
V_prog/erase
1.8
3.6
V
Supply voltage for read operation
Internal FCLK frequency¹
V_Read
1.8
f_FCLK
150
3.6
V
200
kHz
Internal FCLK period (1/FCLK)
Byte program time (random location)⁽²⁾
Byte program time (burst mode)⁽²⁾
Page erase time²
Mass erase time⁽²⁾
Program/erase endurance³
T_L to T_H = –40°C to + 85°C
T = 25°C
t_Fcyc
t_prog
t_Burst
t_Page
t_Mass
5
10,000
9
4
4000
20,000
—
100,000
6.67
—
—
µs
t_Fcyc
t_Fcyc
t_Fcyc
t_Fcyc
cycles
Data retention⁴
t_{D_ret}
15
100
—
years
1 _{The frequency of this clock is controlled by a software setting.}
2 _{These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for}
calculating approximate time to program and erase.
3 _{Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional information on how}
Motorola defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
4 _{Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated}
to 25°C using the Arrhenius equation. For additional information on how Motorola defines typical data retention, please refer
to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
MC9S08QG8 and MC9S08QG4 Data Sheet, Rev. 1.01
Freescale Semiconductor
277