S6J3200 Datasheet, PDF (152/179 Pages) Cypress Semiconductor – 32-bit Microcontroller Traveo꽬 Family

S6J3200 Series
8.7 Flash Memory
8.7.1 Electrical Characteristics
Parameter
Min
Value
Typ
Sector erase time
-
300
-
800
8bit write time
16bit write time
32bit write time
64bit write time
-
15
-
19
-
27
-
45
8bit (with ECC) write
time
-
19
16bit (with ECC) write
time
32bit (with ECC) write
time
-
23
-
31
64bit (with ECC) write
time
Erase count^*2 /
Data retention time
-
49
1,000/20 years
10,000/10
years
-
100,000/5
years
Notes:
− *1: Guaranteed value for up to 100,000 erases
− *2: Number of erases for each sector
Max^*3
1100
3700
288
384
567
945
384
483
651
1029
-
Unit
Remarks
ms ^{8kB sector*1}
Internal preprogramming time included
ms ^{64kB sector*1}
Internal preprogramming time included
µs System-level overhead time excluded^*1
µs System-level overhead time excluded^*1
µs System-level overhead time excluded^*1
µs System-level overhead time excluded^*1
µs System-level overhead time excluded^*1
µs System-level overhead time excluded^*1
µs System-level overhead time excluded^*1
µs System-level overhead time excluded^*1
Temperature at write/erase time
- Average temperature T_A=+85 degrees
Celsius
8.7.2 Notes
While the Flash memory is written or erased, shutdown of the external power (VCC5) is prohibited.
In the application system where VCC5 might be shut down while writing or erasing, be sure to turn the
power off by using an external voltage detection function.
To put it concretely, after the external power supply voltage falls below the detection voltage (VDL), hold VCC5 at 2.7V or more
within the duration calculated by the following expression:
Td^*1 [μs] + ( 1 / FCRF*2[MHz] ) x 1029 + 25 [μs]
*1 : See "8.4.10 Low-Voltage Detection"
*2 : See "8.4.1 Source Clock "
Document Number: 002-05682 Rev.*A
Page 152 of 179