|
HD64F36024FX Datasheet, PDF (292/386 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents | |||
|
◁ |
Section 18 Electrical Characteristics
18.2.6 Flash Memory Characteristics
Table 18.7 Flash Memory Characteristics
VCC = 3.0 V to 5.5 V, VSS = 0.0 V, Ta = â20°C to +75°C, unless otherwise specified.
Item
Test
Symbol Condition
Programming time (per 128 bytes)*1*2*4
tP
Erase time (per block) *1*3*6
tE
Reprogramming count
NWEC
Programming Wait time after SWE
x
bit setting*1
Wait time after PSU
y
bit setting*1
Wait time after P bit setting z1
1â¤nâ¤6
*1*4
z2
7 ⤠n ⤠1000
z3
Additional-
programming
Wait time after P bit clear*1 α
Wait time after PSU
β
bit clear*1
Wait time after PV
γ
bit setting*1
Wait time after
ε
dummy write*1
Wait time after PV bit clear*1 η
Wait time after SWE
θ
bit clear*1
Maximum
N
programming count*1*4*5
Min
â
â
1000
1
50
28
198
8
5
5
4
2
2
100
â
Values
Typ Max
7
200
100 1200
10000 â
â
â
â
â
30
32
200 202
10
12
â
â
â
â
â
â
â
â
â
â
â
â
â
1000
Unit
ms
ms
Times
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Times
Rev. 4.00 Sep. 23, 2005 Page 264 of 354
REJ09B0025-0400
|
▷ |