4552 Datasheet, PDF (138/145 Pages) Renesas Technology Corp – SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER

4552 Group
VOLTAGE DROP DETECTION CIRCUIT CHARACTERISTICS
(One Time PROM version: Ta = –20 °C to 85 °C, unless otherwise noted)
Symbol
VRST^–
VRST+
VRST+ –
VRST^–
IRST
TRST
Parameter
Detection voltage
(reset occurs) (Note 2)
Detection voltage
(reset release) (Note 3)
Detection voltage hysteresis
Operation current (Note 4)
Detection time (Note 5)
Test conditions
Ta = 25 °C
-20 °C ≤ Ta < 0 °C
0 °C ≤ Ta < 50 °C
50 °C ≤ Ta ≤ 85 °C
Ta = 25 °C
-20 °C ≤ Ta < 0 °C
0 °C ≤ Ta < 50 °C
50 °C ≤ Ta ≤ 85 °C
VDD = 3 V
VDD → (VRST^– – 0.1 V)
Limits
Unit
Min.
Typ.
Max.
1.6
1.8
2
V
1.7
2.3
1.4
2.2
1.2
1.9
1.7
1.9
2.1
V
1.8
2.4
1.5
2.3
1.3
2
0.1
V
30
60
µA
0.2
1.2
ms
Notes 1: The voltage drop detection circuit is equipped with only the H version.
2: The detection voltage (VRST^–) is defined as the voltage when reset occurs when the supply voltage (VDD) is falling.
3: The detection voltage (VRST+) is defined as the voltage when reset is released when the supply voltage (VDD) is rising from reset occurs.
4: In the H version, IRST is added to IDD (supply current).
5: The detection time (TRST) is defined as the time until reset occurs when the supply voltage (VDD) is falling to [VRST^– – 0.1 V].
6: The detection voltages (VRST+, VRST^–) are set up lower than the minimum value of the supply voltage of the recommended operating conditions.
As for details, refer to the LIST OF PRECAUTIONS.
Rev.3.02 Dec 22, 2006 page 138 of 142
REJ03B0023-0302