MC68HC908GP32 Datasheet, PDF (171/410 Pages) Motorola, Inc – M68HC08 Family of 8-bit microcontroller units (MCUs)

Freescale Semiconductor, Inc.
FLASH Memory
FLASH Program Operation
11.7 FLASH Program Operation
Programming of the FLASH memory is done on a row basis. A row
consists of 64 consecutive bytes starting from addresses $XX00,
$XX40, $0080 and $XXC0. Use this step-by-step procedure to program
a row of FLASH memory (Figure 11-2 is a flowchart representation):
1. Set the PGM bit. This configures the memory for program
operation and enables the latching of address and data for
programming.
2. Read from the FLASH block protect register.
3. Write any data to any FLASH address within the row address
range desired.
4. Wait for a time, t_nvs (min. 10µs).
5. Set the HVEN bit.
6. Wait for a time, t_pgs (min. 5µs).
7. Write data to the FLASH address to be programmed. (See note.)
8. Wait for a time, t_PROG (min. 30µs).
9. Repeat step 7 and 8 until all the bytes within the row are
programmed.
10. Clear the PGM bit. (See note.)
11. Wait for a time, t_nvh (min. 5µs).
12. Clear the HVEN bit.
13. After time, t_rcv (min. 1µs), the memory can be accessed in read
mode again.
NOTE:
The time between each FLASH address change (step 7 to step 7), or the
time between the last FLASH address programmed to clearing PGM bit
(step 7 to step 10), must not exceed the maximum programming time,
t_PROG max.
This program sequence is repeated throughout the memory until all data
is programmed.
MC68HC908GP32•MC68HC08GP32 — Rev. 6
MOTOROLA
FLASH Memory
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Technical Data
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