PIC18FXX39 Datasheet, PDF (267/322 Pages) Microchip Technology – Enhanced FLASH Microcontrollers with Single Phase Induction Motor Control Kernel

PIC18FXX39
TABLE 23-2: MEMORY PROGRAMMING REQUIREMENTS
DC Characteristics
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +85°C for industrial
-40°C  TA  +125°C for extended
Param
No.
Sym
Characteristic
Min Typ† Max Units
Conditions
Internal Program Memory
Programming Specifications
D110 VPP _{Voltage on MCLR/VPP pin}
D113 IDDP _{Supply Current during}
Programming
9.00
—
— 13.25 V
—
10 mA
D120
D121
ED
VDRW
Data EEPROM Memory
Cell Endurance
VDD for Read/Write
100K
1M
VMIN
—
D122 TDEW Erase/Write Cycle Time
D123 TRETD Characteristic Retention
—
4
40
—
D123A TRETD Characteristic Retention
D124 TREF Number of Total Erase/Write
Cycles before Refresh⁽²⁾
Program FLASH Memory
D130 EP Cell Endurance
D131 VPR VDD for Read
100
—
1M
10M
10K
VMIN
100K
—
D132 VIE VDD for Block Erase
4.5
—
D132A VIW VDD for Externally Timed Erase 4.5
—
or Write
D132B VPEW VDD for Self-timed Write
VMIN
—
D133 TIE ICSP Block Erase Cycle Time
—
4
D133A TIW ICSP Erase or Write Cycle Time 1
—
(externally timed)
D133A TIW Self-timed Write Cycle Time
—
2
D134 TRETD Characteristic Retention
40
—
D134A TRETD Characteristic Retention
100
—
— E/W -40C to +85C
5.5 V Using EECON to read/write
VMIN = Minimum operating
voltage
— ms
— Year Provided no other
specifications are violated
— Year 25C (Note 1)
— E/W -40°C to +85°C
— E/W -40C to +85C
5.5 V VMIN = Minimum operating
voltage
5.5 V Using ICSP port
5.5 V Using ICSP port
5.5 V VMIN = Minimum operating
voltage
— ms VDD  4.5V
— ms VDD  4.5V
— ms
— Year Provided no other
specifications are violated
— Year 25C (Note 1)
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: Retention time is valid, provided no other specifications are violated.
2: Refer to Section 6.8 for a more detailed discussion on data EEPROM endurance.
 2002-2013 Microchip Technology Inc.
Preliminary
DS30485B-page 267