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MC908GR32AVFAE Datasheet, PDF (293/314 Pages) Freescale Semiconductor, Inc – Microcontrollers
20.15 Memory Characteristics
Memory Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
RAM data retention voltage
VRDR
1.3
—
—
V
FLASH program bus clock frequency
—
1
—
—
MHz
FLASH read bus clock frequency
fRead(1)
0
—
8M
Hz
FLASH page erase time
<1 k cycles
>1 k cycles
tErase
0.9
1
1.1
ms
3.6
4
5.5
FLASH mass erase time
tMErase
4
—
—
ms
FLASH PGM/ERASE to HVEN setup time
tNVS
10
—
—
μs
FLASH high-voltage hold time
tNVH
5
—
—
μs
FLASH high-voltage hold time (mass erase)
tNVHL
100
—
—
μs
FLASH program hold time
tPGS
5
—
—
μs
FLASH program time
tPROG
30
—
40
μs
FLASH return to read time
tRCV(2)
1
—
—
μs
FLASH cumulative program HV period
tHV(3)
—
—
4
ms
FLASH endurance(4)
—
10 k
100 k
—
Cycles
FLASH data retention time(5)
—
15
100
—
Years
1. fRead is defined as the frequency range for which the FLASH memory can be read.
2. tRCV is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clear-
ing HVEN to 0.
3. tHV is defined as the cumulative high voltage programming time to the same row before next erase.
tHV must satisfy this condition: tNVS + tNVH + tPGS + (tPROG x 32) ≤ tHV maximum.
4. Typical endurance was evaluated for this product family. For additional information on how Freescale Semiconductor
defines Typical Endurance, please refer to Engineering Bulletin EB619.
5. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines Typical Data
Retention, please refer to Engineering Bulletin EB618.
MC68HC908GR60A • MC68HC908GR48A • MC68HC908GR32A Data Sheet, Rev. 5
Freescale Semiconductor
293