DS152 Datasheet, PDF (2/56 Pages) Xilinx, Inc – DC and Switching Characteristics

Virtex-6 FPGA Data Sheet: DC and Switching Characteristics
Table 2: Recommended Operating Conditions
Symbol
Description
Min
Max Units
Internal supply voltage relative to GND, T_j = 0°C to +85°C
0.95
1.05
V
V_CCINT
For -1L commercial temperature range devices: internal supply voltage relative
to GND, T_j = 0°C to +85°C
0.87
0.93
V
For -1L industrial temperature range devices: internal supply voltage relative to GND,
0.91
T_j = –40°C to +100°C
0.97
V
V_CCAUX Auxiliary supply voltage relative to GND, T_j = 0°C to +85°C
V_CCO(1)(3)(4) Supply voltage relative to GND, T_j = 0°C to +85°C
2.375
1.14
2.625
V
2.625
V
2.5V supply voltage relative to GND, T_j = 0°C to +85°C
V_IN
2.5V and below supply voltage relative to GND,
T_j = 0°C to +85°C
GND – 0.20 2.625
V
GND – 0.20 V_CCO + 0.2 V
I_IN(6)
Maximum current through any pin in a powered or unpowered bank when forward
biasing the clamp diode.
–
10
mA
V_BATT(2)
V_FS(7)
Battery voltage relative to GND, T_j = 0°C to +85°C
External voltage supply for eFUSE programming
1.0
2.375
2.5
V
2.625
V
Notes:
1. Configuration data is retained even if V_CCO drops to 0V.
2. V_BATT is required only when using bitstream encryption. If battery is not used, connect V_BATT to either ground or V_CCAUX.
3. Includes V_CCO of 1.2V, 1.5V, 1.8V, and 2.5V.
4. The configuration supply voltage V_{CC_CONFIG} is also known as V_{CCO_0}.
5. All voltages are relative to ground.
6. A total of 100 mA per bank should not be exceeded.
7. When not programming eFUSE, connect V_FS to GND.
Table 3: DC Characteristics Over Recommended Operating Conditions ⁽¹⁾⁽²⁾
Symbol
Description
V_DRINT
V_DRI
I_REF
I_L
C_IN(3)
I_RPU
I_RPD
I_BATT
n
Data retention V_CCINT voltage (below which configuration data might be lost)
Data retention V_CCAUX voltage (below which configuration data might be lost)
V_REF leakage current per pin
Input or output leakage current per pin (sample-tested)
Die input capacitance at the pad
Pad pull-up (when selected) @ V_IN = 0V, V_CCO = 2.5V
Pad pull-up (when selected) @ V_IN = 0V, V_CCO = 1.8V
Pad pull-up (when selected) @ V_IN = 0V, V_CCO = 1.5V
Pad pull-up (when selected) @ V_IN = 0V, V_CCO = 1.2V
Pad pull-down (when selected) @ V_IN = 2.5V
Battery supply current
Temperature diode ideality factor
r
Series resistance
Min
Typ
Max Units
0.75
–
–
V
2.0
–
–
V
–
–
10
µA
–
–
10
µA
–
–
8
pF
20
–
80
µA
8
–
40
µA
5
–
30
µA
1
–
20
µA
3
–
80
µA
–
–
150
nA
–
1.0002
–
n
–
5
–
Ω
Notes:
1. Typical values are specified at nominal voltage, 25°C.
2. Maximum value specified for worst case process at 25°C.
3. This measurement represents the die capacitance at the pad, not including the package.
DS152 (v2.10) October18, 2010
www.xilinx.com
Advance Product Specification
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