TH58NVG5S0FTA20 Datasheet, PDF (64/73 Pages) Toshiba Semiconductor – 32 GBIT (4G × 8 BIT) CMOS NAND E2PROM

TOSHIBA CONFIDENTIAL
(7) Status Read during a Read operation
TH58NVG5S0FTA20
Command 00
00
[A]
30
70
CE
WE
RY/BY
RE
Address N
Status Read
command input
Status Read
Status output
.
The device status can be read out by inputting the Status Read command “70h” in Read mode. Once the
device has been set to Status Read mode by a “70h” command, the device will not return to Read mode
unless the Read command “00h” is inputted during [A]. If the Read command “00h” is inputted during [A],
Status Read mode is reset, and the device returns to Read mode. In this case, data output starts
automatically from address N and address input is unnecessary
(8) Auto programming failure
80
10
Address Data
M input
80
10
M
Fail
70
I/O
80
10
Address Data
N input
If the programming result for page address M is Fail, do not try to program the
page to address N in another block without the data input sequence.
Because the previous input data has been lost, the same input sequence of 80h
command, address and data is necessary.
N
(9) RY / BY : termination for the Ready/Busy pin ( RY / BY )
A pull-up resistor needs to be used for termination because the RY / BY buffer consists of an open drain
circuit.
V_CC
Ready _VCC
V_CC
R
Busy
Device
RY / BY
C_L
t_f
t_r
V_SS
1.5 µs
t_r 1.0 µs
This data may vary from device to device.
We recommend that you use this data as a
reference when selecting a resistor value.
0.5 µs
0
64
V_CC = 3.3 V
Ta = 25°C
C_L = 100 pF 15 ns
t_f
10 ns t_f
t_r
5 ns
1 KΩ
2 KΩ 3 KΩ
R
4 KΩ
2010-12-13C