TH58NVG5S0FTA20 Datasheet, PDF (38/73 Pages) Toshiba Semiconductor – 32 GBIT (4G × 8 BIT) CMOS NAND E2PROM

TOSHIBA CONFIDENTIAL
Auto Page Program Operation
TH58NVG5S0FTA20
The device carries out an Automatic Page Program operation when it receives a "10h" Program command
after the address and data have been input. The sequence of command, address and data input is shown below.
(Refer to the detailed timing chart.)
CLE
CE
WE
ALE
RE
RY/BY
I/O ^80h
Din Din Din
Din 10h
70h
Status
Out
Col. M Page P
Data
Data input
Program
Selected
page
Read& verification
The data is transferred (programmed) from the Data Cache via
the Page Buffer to the selected page on the rising edge of WE
following input of the “10h” command. After programming, the
programmed data is transferred back to the Page Buffer to be
automatically verified by the device. If the programming does not
succeed, the Program/Verify operation is repeated by the device
until success is achieved or until the maximum loop number set in
the device is reached.
Random Column Address Change in Auto Page Program Operation
The column address can be changed by the 85h command during the data input sequence of the Auto Page Program
operation.
Two address input cycles after the 85h command are recognized as a new column address for the data input. After
the new data is input to the new column address, the 10h command initiates the actual data program into the
selected page automatically. The Random Column Address Change operation can be repeated multiple times within
the same page.
80h
Din Din Din
Din 85h
Din Din Din
Din 10h
70h Status
Col. M
Page N
Col. M
Data input
Col. M’
Col. M’
Busy
Selected
page
Program
Reading & verification
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2010-12-13C