TH58NVG5S0FTA20 Datasheet, PDF (4/73 Pages) Toshiba Semiconductor – 32 GBIT (4G × 8 BIT) CMOS NAND E2PROM

TOSHIBA CONFIDENTIAL TH58NVG5S0FTA20
ABSOLUTE MAXIMUM RATINGS
SYMBOL
RATING
VALUE
UNIT
V_CC
V_IN
V_I/O
P_D
T_SOLDER
T_STG
T_OPR
Power Supply Voltage
Input Voltage
Input /Output Voltage
Power Dissipation
Soldering Temperature (10 s)
Storage Temperature
Operating Temperature
−0.6 to 4.6
V
−0.6 to 4.6
V
−0.6 to V_CC + 0.3 (≤ 4.6 V)
V
0.3
W
260
°C
−55 to 150
°C
0 to 70
°C
CAPACITANCE *(Ta = 25°C, f = 1 MHz)
SYMB0L
PARAMETER
CONDITION
MIN
C_IN
Input
V_IN = 0 V
⎯
C_OUT
Output
V_OUT = 0 V
⎯
* This parameter is periodically sampled and is not tested for every device.
MAX
40
40
UNIT
pF
pF
4
2010-12-13C