TH58NVG5S0FTA20 Datasheet, PDF (34/73 Pages) Toshiba Semiconductor – 32 GBIT (4G × 8 BIT) CMOS NAND E2PROM

TOSHIBA CONFIDENTIAL TH58NVG5S0FTA20
Read Operation with Read Cache
The device has a Read operation with Data Cache that enables the high speed read operation shown below. When the block address changes, this sequence has to be
started from the beginning.
CLE
CE
WE
ALE
RE
RY / BY
I/O 00h
t_R
t_DCBSYR1
1
30h
2
31h
012 ₃
t_DCBSYR1
3
4
4327 31h
01 _{2 3}
5
4327
t_DCBSYR1
6
3Fh
0 ¹² 3
7
4327
Data Cache
Page Buffer
Col. M Page N
1
Column 0 ^{Page Address N}
Page Address N + 1
Page Address N + 2
Page N
Page N + 1
Page N + 2
2
Page N
3
Page N + 1
5
Page N + 2
7
4
6
Cell Array
Page N
30h
1 ^{Page N + 1}
3
31h & RE clock
Page N + 2
5
31h & RE clock
3Fh & RE clock
If the 31h command is issued to the device, the data content of the next page is transferred to the Page Buffer during serial data out from the Data Cache, and therefore the tR (Data transfer from memory
cell to data register) will be reduced.
1 Normal read. Data is transferred from Page N to Data Cache through Page Buffer. During this time period, the device outputs Busy state for tR max.
2 After the Ready/Busy returns to Ready, 31h command is issued and data is transferred to Data Cache from Page Buffer again. This data transfer takes tDCBSYR1 max and the completion of this time
period can be detected by Ready/Busy signal.
3 Data of Page N + 1 is transferred to Page Buffer from cell while the data of Page N in Data cache can be read out by /RE clock simultaneously.
4 The 31h command makes data of Page N + 1 transfer to Data Cache from Page Buffer after the completion of the transfer from cell to Page Buffer. The device outputs Busy state for tDCBSYR1 max..
This Busy period depends on the combination of the internal data transfer time from cell to Page buffer and the serial data out time.
5 Data of Page N + 2 is transferred to Page Buffer from cell while the data of Page N + 1 in Data cache can be read out by /RE clock simultaneously
6 The 3Fh command makes the data of Page N + 2 transfer to the Data Cache from the Page Buffer after the completion of the transfer from cell to Page Buffer. The device outputs Busy state for
tDCBSYR1 max.. This Busy period depends on the combination of the internal data transfer time from cell to Page buffer and the serial data out time.
7 Data of Page N + 2 in Data Cache can be read out, but since the 3Fh command does not transfer the data from the memory cell to Page Buffer, the device can accept new command input immediately
after the completion of serial data out.
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2010-12-13C