TH58NVG5S0FTA20 Datasheet, PDF (5/73 Pages) Toshiba Semiconductor – 32 GBIT (4G × 8 BIT) CMOS NAND E2PROM

TOSHIBA CONFIDENTIAL TH58NVG5S0FTA20
VALID BLOCKS
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
N_VB
Number of Valid Blocks
16064
⎯
16384
Blocks
NOTE:
The device occasionally contains unusable blocks. Refer to Application Note (13) toward the end of this document.
The first block (Block 0) is guaranteed to be a valid block at the time of shipment.
The specification for the minimum number of valid blocks is applicable over lifetime
The number of valid blocks is on the basis of single plane operations, and this may be decreased with two plane
operations.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
V_CC
Power Supply Voltage
2.7
⎯
3.6
V
V_IH
High Level input Voltage 2.7 V ≤ V_CC ≤ 3.6 V
Vcc x 0.8
⎯
V_CC + 0.3
V
V_IL
Low Level Input Voltage 2.7 V ≤ V_CC ≤ 3.6 V
* −2 V (pulse width lower than 20 ns)
−0.3*
⎯
Vcc x 0.2
DC CHARACTERISTICS (Ta = 0 to 70ˆ, V_CC = 2.7 to 3.6V)
SYMBOL
PARAMETER
CONDITION
MIN
I_IL
Input Leakage Current
V_IN = 0 V to V_CC
⎯
I_LO
Output Leakage Current V_OUT = 0 V to V_CC
⎯
PSL = GND or NU
⎯
I_{CCO0 *1}
Power On Reset Current _{PSL = VCC, FFh command input after}
⎯
Power On
I_{CCO1 *2}
Serial Read Current
CE = V_IL, I_OUT = 0 mA, tcycle = 25 ns
⎯
I_{CCO2 *2}
I_{CCO3 *2}
Programming Current
Erasing Current
⎯
⎯
⎯
⎯
I_CCS
Standby Current
CE = V_CC − 0.2 V, WP = 0 V/V_CC,
⎯
PSL = 0 V/V_CC/NU
TYP.
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
MAX
±10
±10
30
30
30
30
30
200
V
UNIT
µA
µA
mA
mA
mA
mA
µA
V_OH
High Level Output Voltage I_OH = −0.4 mA
2.4
⎯
⎯
V
V_OL
Low Level Output Voltage I_OL = 2.1 mA
⎯
⎯
0.4
V
I_OL
( RY / BY )
Output current of RY / BY
pin
V_OL = 0.4 V
⎯
8
⎯
mA
*1 Refer to application note (2) for detail
*2 Icco1/2/3 are the value of one chip, and an unselected chip is in Standby mode.
5
2010-12-13C