SMJ320VC5416 Datasheet, PDF (22/92 Pages) Texas Instruments – Fixed-Point Digital Signal Processor

Functional Overview
The standard on-chip ROM layout is shown in Table 3–1.
Table 3–1. Standard On-Chip ROM Layout^†
ADDRESS RANGE
DESCRIPTION
C000h–D4FFh
ROM tables for the GSM EFR speech codec
D500h–F7FFh
Reserved
F800h–FBFFh
Bootloader
FC00h–FCFFh
µ-Law expansion table
FD00h–FDFFh
A-Law expansion table
FE00h–FEFFh
FF00h–FF7Fh
Sine look-up table
Reserved^†
FF80h–FFFFh
Interrupt vector table
† _{In the 5416 ROM, 128 words are reserved for factory device-testing purposes. Application code}
to be implemented in on-chip ROM must reserve these 128 words at addresses FF00h–FF7Fh
in program space.
3.3 On-Chip RAM
The 5416 device contains 64K-word × 16-bit of on-chip dual-access RAM (DARAM) and 64K-word × 16-bit
of on-chip single-access RAM (SARAM).
The DARAM is composed of eight blocks of 8K words each. Each block in the DARAM can support two reads
in one cycle, or a read and a write in one cycle. Four blocks of DARAM are located in the address range
0080h–7FFFh in data space, and can be mapped into program/data space by setting the OVLY bit to one. The
other four blocks of DARAM are located in the address range 18000h–1FFFFh in program space. The DARAM
located in the address range 18000h–1FFFFh in program space can be mapped into data space by setting
the DROM bit to one.
The SARAM is composed of eight blocks of 8K words each. Each of these eight blocks is a single-access
memory. For example, an instruction word can be fetched from one SARAM block in the same cycle as a data
word is written to another SARAM block. The SARAM is located in the address range 28000h–2FFFFh, and
38000h–3FFFFh in program space.
3.4 On-Chip Memory Security
The 5416 device has a maskable option to protect the contents of on-chip memories. When the ROM protect
bit is set, no externally originating instruction can access the on-chip memory spaces; HPI writes have no
restriction, but HPI reads are restricted to 4000h – 5FFFh.
12 SGUS035A
April 2003 – Revised July 2003