GRJ43DR72J104KWJ1L Datasheet, PDF (56/221 Pages) Murata Manufacturing Co., Ltd. – Chip Monolithic Ceramic Capacitors

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10.12.20 ^{• This PDF catalog has only typical specifications because there is no space for detailed specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.}
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Continued from the preceding page.
(Note 1) These Specifications and Test Methods indicate typical inspection.
Please refer to individual specifications (our product specifications or the approval sheet).
When no "*" is added in PNs table, please refer to GRM Series Specifications and Test Methods (1).
When "*" is added in PNs table, please refer to GRM Series Specifications and Test Methods (2).
No.
Item
Specifications
Temperature
Compensating Type
High Dielectric Type
Test Method
The measured and observed characteristics should satisfy the
specifications in the following table.
Appearance No defects or abnormalities
Capacitance Within ±2.5% or ±0.25pF
Change (whichever is larger)
B1, B3, R1, R6, R7, C8:
Within ±7.5%
F1, F5, E4: Within ±20%
Resistance
14
to
Soldering
Heat
Q/D.F.
30pF and over: QU1000
30pF and below:
QU400+20C
C: Nominal Capacitance (pF)
[B1, B3, R6, R7, C8]
W.V.: 100V
: 0.025 max. (CF0.068µF)
: 0.05 max. (CU0.068µF)
W.V.: 50/35/25V:
: 0.025 max.*
*GRM32D R7/R6/C8 1E106: 0.035 max.
W.V.: 16/10V: 0.035 max.
W.V.: 6.3/4V
: 0.05 max. (CF3.3µF)
: 0.1 max. (CU3.3µF)
[E4]
W.V.: 25Vmin: 0.025 max.
[F1, F5]
W.V.: 25V min.
: 0.05 max. (CF0.1µF)
: 0.09 max. (CU0.1µF)
W.V.: 16/10V: 0.125 max.
W.V.: 6.3V: 0.15 max.
Preheat the capacitor at 120 to 150°C for 1 minute.
Immerse the capacitor in a eutectic solder or Sn-3.0Ag-0.5Cu
solder solution at 270±5°C for 10±0.5 seconds. Set at room
temperature for 24±2 hours, then measure.
•Initial measurement for high dielectric constant type
Perform a heat treatment at 150+0/–10°C for one hour and
then set at room temperature for 24±2 hours.
Perform the initial measurement.
•Preheating for GRM32/43/55
Step
1
2
Temperature
100 to 120°C
170 to 200°C
Time
1 min.
1 min.
I.R.
More than 10,000MΩ or 500Ω · F (whichever is smaller)
Dielectric
Strength
No defects
The measured and observed characteristics should satisfy the
specifications in the following table.
Appearance No defects or abnormalities
Capacitance Within ±2.5% or ±0.25pF
Change
(whichever is larger)
B1, B3, R1, R6, R7, C8:
Within ±7.5%
F1, F5, E4: Within ±20%
15
Temperature
Cycle
Q/D.F.
30pF and over: QU1000
30pF and below:
QU400+20C
C: Nominal Capacitance (pF)
[B1, B3, R6, R7, C8]
W.V.: 100V
: 0.025 max. (CF0.068µF)
: 0.05 max. (CU0.068µF)
W.V.: 50/35/25V:
: 0.025 max.*
*GRM32D R7/R6/C8 1E106: 0.035 max.
W.V.: 16/10V: 0.035 max.
W.V.: 6.3/4V
: 0.05 max. (CF3.3µF)
: 0.1 max. (CU3.3µF)
[E4]
W.V.: 25Vmin: 0.05 max.
[F1, F5]
W.V.: 25V min.
: 0.05 max. (CF0.1µF)
: 0.09 max. (CU0.1µF)
W.V.: 16/10V: 0.125 max.
W.V.: 6.3V: 0.15 max.
Fix the capacitor to the supporting jig in the same
manner and under the same conditions as (10).
Perform the five cycles according to the four heat treatments
shown in the following table.
Set for 24±2 hours at room temperature, then measure.
Step
Temp. (°C)
Time (min.)
1
Min.
Operating
Temp. +0/–3
30±3
2
Room
Temp.
2 to 3
3
Max.
Operating
Temp. +3/–0
30±3
4
Room
Temp.
2 to 3
•Initial measurement for high dielectric constant type
Perform a heat treatment at 150+0/–10°C for one hour and
then set at room temperature for 24±2 hours.
Perform the initial measurement.
I.R.
More than 10,000MΩ or 500Ω · F (whichever is smaller)
Dielectric
Strength
No defects
Continued on the following page.
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