MC68HC908BD48 Datasheet, PDF (58/290 Pages) Freescale Semiconductor, Inc – Microcontrollers

FLASH Memory
4. Set the HVEN bit.
5. Wait for a time, t_Erase (min. 2ms)
6. Clear the ERASE bit.
7. Wait for a time, t_nvh (min. 5µs)
8. Clear the HVEN bit.
9. After a time, t_rcv (min. 1µs), the memory can be accessed again in
read mode.
NOTE:
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
4.6 FLASH Mass Erase Operation
Use the following procedure to erase entire FLASH memory:
1. Set both the ERASE bit, and the MASS bit in the FLASH control
register.
2. Write any data to any FLASH address within the FLASH memory
address range.
3. Wait for a time, t_nvs (5µs).
4. Set the HVEN bit.
5. Wait for a time, t_MErase (4ms).
6. Clear the ERASE bit.
7. Wait for a time, t_nvhl (100µs).
8. Clear the HVEN bit.
9. After time, t_rcv (1µs)_, the memory can be accessed again in read
mode.
NOTE:
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
Technical Data
58
FLASH Memory
MC68HC908BD48 — Rev. 1.0
MOTOROLA