MC68HC908BD48 Datasheet, PDF (57/290 Pages) Freescale Semiconductor, Inc – Microcontrollers

FLASH Memory
FLASH Block Erase Operation
HVEN — High-Voltage Enable Bit
This read/write bit enables the charge pump to drive high voltages for
program and erase operations in the array. HVEN can only be set if
either PGM = 1 or ERASE = 1 and the proper sequence for program
or erase is followed.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
MASS — Mass Erase Control Bit
Setting this read/write bit configures the 48,128 bytes FLASH array
for mass erase operation.
1 = Mass Erase operation selected
0 = Mass Erase operation not selected
ERASE — Erase Control Bit
This read/write bit configures the memory for erase operation. ERASE
is interlocked with the PGM bit such that both bits cannot be equal to
1 or set to 1 at the same time.
1 = Erase operation selected
0 = Erase operation not selected
PGM — Program Control Bit
This read/write bit configures the memory for program operation.
PGM is interlocked with the ERASE bit such that both bits cannot be
equal to 1 or set to 1 at the same time.
1 = Program operation selected
0 = Program operation not selected
4.5 FLASH Block Erase Operation
Use the following procedure to erase a block (512 bytes) of FLASH
memory:
1. Set the ERASE bit, and clear the MASS bit in the FLASH control
register.
2. Write any data to any FLASH address within the block address
range desired.
3. Wait for a time, t_nvs (min. 5µs)
MC68HC908BD48 — Rev. 1.0
MOTOROLA
FLASH Memory
Technical Data
57