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MC68HC908BD48 Datasheet, PDF (281/290 Pages) Freescale Semiconductor, Inc – Microcontrollers
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Electrical Specifications
Memory Characteristics
21.15 Memory Characteristics
Characteristic
Symbol
Min
Max
Unit
RAM data retention voltage
VRDR
2
—
V
FLASH program bus clock frequency
—
1
—
MHz
FLASH read bus clock frequency
fRead(1)
32 k
8.4 M
Hz
FLASH page erase time
tErase(2)
2
—
ms
FLASH mass erase time
tMErase(3)
4
—
ms
FLASH PGM/ERASE to HVEN set up time
tnvs
5
—
µs
FLASH high-voltage hold time
tnvh
5
—
µs
FLASH high-voltage hold time (mass erase)
tnvhl
100
—
µs
FLASH program hold time
tpgs
10
—
µs
FLASH program time
tPROG
20
40
µs
FLASH return to read time
trcv(4)
1
—
µs
FLASH cumulative program hv period
FLASH row erase endurance(6)
FLASH row program endurance(7)
FLASH data retention time(8)
tHV(5)
—
—
—
—
4
ms
10 k
—
Cycles
10 k
—
Cycles
10
—
Years
Notes:
1. fRead is defined as the frequency range for which the FLASH memory can be read.
2. If the page erase time is longer than tErase (Min), there is no erase-disturb, but it reduces the endurance of
the FLASH memory.
3. If the mass erase time is longer than tMErase (Min), there is no erase-disturb, but it reduces the endurance of
the FLASH memory.
4. trcv is defined as the time it needs before the FLASH can be read after turning off the high voltage charge
pump, by clearing HVEN to logic 0.
5. tHV is defined as the cumulative high voltage programming time to the same row before next erase.
tHV must satisfy this condition: tnvs + tnvh + tpgs + (tPROG × 64) ≤ tHV max.
6. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at
least this many erase / program cycles.
7. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at
least this many erase / program cycles.
8. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum
time specified.
MC68HC908BD48 — Rev. 1.0
MOTOROLA
Electrical Specifications
Technical Data
281
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