K4N51163QC-ZC Datasheet, PDF (63/64 Pages) Samsung semiconductor – 512Mbit gDDR2 SDRAM

K4N51163QC-ZC
512M gDDR2 SDRAM
Table 2. Full Strength Default Pullup Driver Characteristics
Pulldown Current (mA)
Voltage (V)
Minimum
(23.4 Ohms)
Nominal Default Low (18 Nominal Default High(18
ohms)
ohms)
0.2
-8.5
-11.1
-11.8
0.3
-12.1
-16.0
-17.0
0.4
-14.7
-20.3
-22.2
0.5
-16.4
-24.0
-27.5
0.6
-17.8
-27.2
-32.4
0.7
-18.6
-29.8
-36.9
0.8
-19.0
-31.9
-40.8
0.9
-19.3
-33.4
-44.5
1.0
-19.7
-34.6
-47.7
1.1
-19.9
-35.5
-50.4
1.2
-20.0
-36.2
-52.5
1.3
-20.1
-36.8
-54.2
1.4
-20.2
-37.2
-55.9
1.5
-20.3
-37.7
-57.1
1.6
-20.4
-38.0
-58.4
1.7
-20.6
-38.4
-59.6
1.8
-38.6
-60.8
1.9
Maximum
(12.6 Ohms)
-15.9
-23.8
-31.8
-39.7
-47.7
-55.0
-62.3
-69.4
-75.3
-80.5
-84.6
-87.7
-90.8
-92.9
-94.9
-97.0
-99.1
-101.1
Figure 2. gDDR2 Default Pullup Characteristics for Full Strength Output Driver
0
-20
Minimum
-40
Nominal
Default
-60
Low
-80
-100
Nominal
Default
High
Maximum
-120
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
VDDQ to VOUT (V)
- 63 -
Rev 1.5 Oct. 2005