K4N51163QC-ZC Datasheet, PDF (2/64 Pages) Samsung semiconductor – 512Mbit gDDR2 SDRAM

K4N51163QC-ZC
512M gDDR2 SDRAM
Revision History
Revision
1.0
1.1
Month
April
April
Year
2005
2005
1.2
May
2005
1.3
Jun
2005
1.4
September 2005
1.5
October
2005
History
- First Released.
- Corrected typo.
- Changed speed bin organization.
(K4N56163QF-GC2A/K4N56163QF-GC33/K4N56163QF-GC36)
- 533 Speed bin changed into 550 speed bin.
- 600 speed bin is added.
- 667 speed bin changed into 700 speed bin.
- Corrected typo.
- Seperaed gDDR2 device operation & timing.
- Corrected typo.
- Added gDDR2-800 SPEC
- Revised the IDD current values.
- Corrected typo.
- Merged Device operation and timing diagram according to customer request
-2-
Rev 1.5 Oct. 2005