K4N51163QC-ZC Datasheet, PDF (62/64 Pages) Samsung semiconductor – 512Mbit gDDR2 SDRAM

K4N51163QC-ZC
512M gDDR2 SDRAM
Table 1. Full Strength Default Pulldown Driver Characteristics
Pulldown Current (mA)
Voltage (V)
Minimum
(23.4 Ohms)
Nominal Default Low (18 Nominal Default High(18
ohms)
ohms)
0.2
8.5
11.3
11.8
0.3
12.1
16.5
16.8
0.4
14.7
21.2
22.1
0.5
16.4
25.0
27.6
0.6
17.8
28.3
32.4
0.7
18.6
30.9
36.9
0.8
19.0
33.0
40.9
0.9
19.3
34.5
44.6
1.0
19.7
35.5
47.7
1.1
19.9
36.1
50.1
1.2
20.0
36.6
52.2
1.3
20.1
36.9
54.2
1.4
20.2
37.1
55.9
1.5
20.3
37.4
57.1
1.6
20.4
37.6
58.4
1.7
20.6
37.7
59.6
1.8
37.9
60.9
1.9
Maximum
(12.6 Ohms)
15.9
23.8
31.8
39.7
47.7
55.0
62.3
69.4
75.3
80.5
84.6
87.7
90.8
92.9
94.9
97.0
99.1
101.1
Figure 1. gDDR2 Default Pulldown Characteristics for Full Strength Driver
120
100
Maximum
80
Nominal
Default
60
High
40
Nominal
Default
Low
20
Minimum
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
VOUT to VSSQ (V)
- 62 -
Rev 1.5 Oct. 2005