K4N51163QC-ZC Datasheet, PDF (30/64 Pages) Samsung semiconductor – 512Mbit gDDR2 SDRAM

K4N51163QC-ZC
512M gDDR2 SDRAM
ODT timing for active/standby mode
T0
T1
T2
T3
T4
T5
T6
CK
CK
CKE
ODT
Internal
Term Res.
tIS
V_IH(AC)
tIS
tAOND
V_IL(AC)
tAON,min
tAOFD
RTT
tAOF,min
tAON,max
tAOF,max
ODT timing for powerdown mode
T0
T1
CK
CK
CKE
ODT
tIS
V_IH(AC)
Internal
Term Res.
tAONPD,min
tAONPD,max
T2
T3
tIS
V_IL(AC)
tAOFPD,min
T4
T5
T6
tAOFPD,max
RTT
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Rev 1.5 Oct. 2005