K4N51163QC-ZC Datasheet, PDF (61/64 Pages) Samsung semiconductor – 512Mbit gDDR2 SDRAM

K4N51163QC-ZC
512M gDDR2 SDRAM
Input Signal Overshoot/Undershoot Specification
AC Overshoot/Undershoot Specification for Address and Control Pins A0-A15, BA0-BA2, CS, RAS, CAS, WE, CKE, ODT
Parameter
Maximum peak amplitude allowed for overshoot area (See following figyre):
- 36
0.9V
Specification
- 2A
0.9V
Maximum peak amplitude allowed for undershoot area (See following figure):
Maximum overshoot area above VDD (See following figure).
Maximum undershoot area below VSS (See following figure).
0.9V
0.56 V-ns
0.56 V-ns
0.9V
0.45 V-ns
0.45 V-ns
Maximum Amplitude
Overshoot Area
Volts ^VDD
(V)
VSS
Maximum Amplitude
Undershoot Area
Time (ns)
AC Overshoot and Undershoot Definition for Address and Control Pins
AC Overshoot/Undershoot Specification for Clock, Data, Strobe, and Mask Pins DQ, DQS, DM, CK, CK
Parameter
Specification
- 36
-2A
Maximum peak amplitude allowed for overshoot area (See following figure):
0.9V
0.9V
Maximum peak amplitude allowed for undershoot area (See following figure):
0.9V
0.9V
Maximum overshoot area above VDDQ (See following figure):
0.28 V-ns
0.23 V-ns
Maximum undershoot area below VSSQ (See following figure):
0.28 V-ns
0.23 V-ns
Maximum Amplitude
Overshoot Area
Volts ^VDDQ
(V)
VSSQ
Maximum Amplitude
Undershoot Area
Time (ns)
AC Overshoot and Undershoot Definition for Clock, Data, Strobe, and Mask Pins
- 61 -
Rev 1.5 Oct. 2005