K4N51163QC-ZC Datasheet, PDF(21/64 Page) Samsung semiconductor

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

K4N51163QC-ZC Datasheet, PDF (21/64 Pages) Samsung semiconductor – 512Mbit gDDR2 SDRAM

◁

K4N51163QC-ZC

512M gDDR2 SDRAM

Initialization Sequence after Power Up

/CK

CKE

ODT

tCHtCL

tIS

VIH(ac)

Command

NOP

PRE

ALL

EMRS

MRS

PRE

ALL

REF

400ns

tRP

tMRD

tRP

DLL

ENABLE

DLL

RESET

REF

tRFC

min. 200 Cycle

MRS

EMRS

ANY

CMD

tMRD

Follow OCD

tOIT

Flowchart

OCD

Default

OCD

CAL. MODE

EXIT

Programming the Mode Register

For application flexibility, burst length, burst type, CAS latency, DLL reset function, write recovery time(tWR) are user defined variables

and must be programmed with a Mode Register Set (MRS) command. Additionally, DLL disable function, driver impedance, additive

CAS latency, ODT(On Die Termination), single-ended strobe, and OCD(off chip driver impedance adjustment) are also user defined

variables and must be programmed with an Extended Mode Register Set (EMRS) command. Contents of the Mode Register(MR) or

Extended Mode Registers(EMR(#)) can be altered by re-executing the MRS and EMRS Commands. If the user chooses to modify only

a subset of the MRS or EMRS variables, all variables must be redefined when the MRS or EMRS commands are issued.

MRS, EMRS and Reset DLL do not affect array contents, which means reinitialization including those can be executed any time after

power-up without affecting array contents.

- 21 -

Rev 1.5 Oct. 2005

▷