K4N26323AE Datasheet, PDF (52/52 Pages) Samsung semiconductor – 128Mbit GDDR2 SDRAM

K4N26323AE-GC
128M GDDR2 SDRAM
Voltage (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
Typical
-7.3
-4.5
-2.0
0.3
2.3
4.1
5.6
6.9
8.0
9.0
9.9
10.8
11.7
12.6
13.5
14.2
15.2
16.1
16.9
17.8
Pulldown Current (mA)
Minimum
-5.8
-3.7
-1.9
-0.2
1.2
2.5
3.6
4.6
5.5
6.3
7.0
7.8
8.5
9.3
10.0
10.7
11.4
12.1
12.8
13.6
Maximum
-8.7
-4.9
-1.4
1.6
4.3
6.7
8.7
10.4
11.7
12.9
14.0
15.1
16.1
17.1
18.1
19.1
20.1
21.1
22.1
23.1
Typical
7.6
5.2
2.9
0.8
-1.1
-2.9
-4.5
-5.9
-7.1
-8.3
-9.4
-10.5
-11.5
-12.5
-13.5
-14.5
-15.5
-16.4
-17.4
-18.3
Pullup Current (mA)
Minimum
6.1
4.3
2.7
1.1
-0.3
-1.6
-2.8
-3.9
-4.9
-5.9
-6.8
-7.6
-8.5
-9.3
-10.1
-10.9
-11.7
-12.5
-13.3
-14.1
Maximum
9.2
6.1
3.2
0.5
-2.1
-4.4
-6.5
-8.3
-9.9
-11.3
-12.6
-13.9
-15.1
-16.3
-17.4
-18.5
-19.7
-20.8
-21.0
-23.0
Temperature (Tj)
Typical
Minimum
Maximum
50 °C
100 °C
0 °C
Vdd/Vddq
Typical
Minimum
Maximum
2.5V
2.4V
2.6V
The above characteristics are specified under best, worst and normal process variation/conditions
- 52 -
Rev. 1.7 (Jan. 2003)