K4N26323AE Datasheet, PDF (46/52 Pages) Samsung semiconductor – 128Mbit GDDR2 SDRAM

K4N26323AE-GC
128M GDDR2 SDRAM
Voltage (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
Typical
0.0
2.8
5.2
7.2
8.8
10.1
11.1
11.7
12.1
12.4
12.5
12.6
12.7
12.8
12.8
12.9
12.9
13.0
13.0
13.1
Pulldown Current (mA)
Minimum
0.0
1.9
3.5
4.9
5.9
6.8
7.3
7.7
7.9
8.0
8.1
8.2
8.3
8.3
8.4
8.4
8.4
8.5
8.5
8.6
Maximum
0.0
4.0
7.5
10.5
13.0
15.0
16.5
17.5
18.1
18.4
18.7
18.8
18.9
19.0
19.1
19.2
19.2
19.3
19.3
19.4
Typical
0.0
-2.2
-4.2
-6.0
-7.5
-8.8
-9.8
-10.6
-11.2
-11.7
-12.1
-12.4
-12.7
-12.9
-13.1
-13.3
-13.5
-13.7
-13.8
-14.0
Pullup Current (mA)
Minimum
0.0
-1.5
-2.8
-4.0
-5.0
-5.9
-6.6
-7.1
-7.5
-7.8
-8.1
-8.3
-8.5
-8.7
-8.8
-9.0
-9.1
-9.2
-9.4
-9.5
Maximum
0.0
-3.0
-5.7
-8.2
-10.4
-12.3
-13.9
-15.1
-15.9
-16.6
-17.1
-17.5
-17.9
-18.2
-18.5
-18.8
-19.0
-19.2
-19.4
-19.6
Temperature (Tj)
Typical
Minimum
Maximum
50 °C
100 °C
0 °C
Vdd/Vddq
Typical
Minimum
Maximum
2.5V
2.4V
2.6V
The above characteristics are specified under best, worst and normal process variation/conditions
- 46 -
Rev. 1.7 (Jan. 2003)