K4N26323AE Datasheet, PDF (44/52 Pages) Samsung semiconductor – 128Mbit GDDR2 SDRAM

K4N26323AE-GC
128M GDDR2 SDRAM
Voltage (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
Typical
-7.2
-2.1
2.5
6.4
9.8
12.7
15.1
16.9
18.3
19.5
20.6
21.6
22.6
23.5
24.5
25.4
26.3
27.1
28.0
28.9
Pulldown Current (mA)
Minimum
-5.8
-2.1
1.1
3.9
6.3
8.3
9.9
11.2
12.2
13.1
14.0
14.8
15.6
16.4
17.1
17.9
18.6
19.4
20.1
20.9
Maximum
-8.6
-1.4
5.0
10.6
15.4
19.5
22.8
25.3
27.2
28.7
30.0
31.2
32.3
33.4
34.5
35.5
36.5
37.6
38.6
39.6
Typical
7.6
3.1
-0.9
-4.6
-7.9
-10.8
-13.4
-15.5
-17.3
-18.9
-20.4
-21.7
-23.0
-24.2
-25.4
-26.6
-27.7
-28.8
-29.9
-31.0
Pullup Current (mA)
Minimum
6.1
2.9
0.1
-2.5
-4.9
-6.9
-8.8
-10.3
-11.7
-12.9
-14.1
-15.2
-16.2
-17.2
-18.1
-19.1
-20.0
-20.9
-21.8
-22.7
Maximum
9.1
3.4
-2.0
-6.9
-11.5
-15.5
-19.1
-21.9
-24.3
-26.3
-28.1
-29.7
-31.3
-32.7
-34.2
-35.5
-36.9
-38.2
-39.5
-40.7
Temperature (Tj)
Typical
Minimum
Maximum
50 °C
100 °C
0 °C
Vdd/Vddq
Typical
Minimum
Maximum
2.5V
2.4V
2.6V
The above characteristics are specified under best, worst and normal process variation/conditions
- 44 -
Rev. 1.7 (Jan. 2003)