K4N26323AE Datasheet, PDF (42/52 Pages) Samsung semiconductor – 128Mbit GDDR2 SDRAM

K4N26323AE-GC
128M GDDR2 SDRAM
Voltage (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
Typical
-14.4
-8.5
-3.2
1.6
5.8
9.5
12.7
15.3
17.5
19.6
21.5
23.3
25.1
26.8
28.6
30.3
32.0
33.7
35.4
37.1
Pulldown Current (mA)
Minimum
-11.5
-7.1
-3.3
0.2
3.3
5.9
8.2
10.2
11.9
13.5
15.1
16.6
18.1
19.6
21.0
22.4
23.9
25.3
26.7
28.1
Maximum
-17.1
-9.0
-1.8
4.7
10.4
15.4
19.7
23.1
25.9
28.3
30.5
32.6
34.7
36.7
38.7
40.7
42.7
44.6
46.6
48.5
Typical
14.9
9.7
4.8
0.4
-3.7
-7.4
-10.8
-13.7
-16.4
-18.8
-21.0
-23.2
-25.3
-27.3
-29.4
-31.3
-33.3
-35.2
-37.1
-39.0
Pullup Current (mA)
Minimum
11.9
8.1
4.6
1.3
-1.7
-4.4
-6.9
-9.2
-11.2
-13.2
-15.0
-16.8
-18.5
-20.2
-21.8
-23.5
-25.1
-26.6
-28.2
-29.8
Maximum
18.0
11.4
5.1
-0.8
-6.2
-11.2
-15.6
-19.4
-22.6
-25.6
-28.3
-30.9
-33.4
-35.8
-38.1
-40.4
-42.7
-44.9
-47.1
-49.3
Temperature (Tj)
Typical
Minimum
Maximum
50 °C
100 °C
0 °C
Vdd/Vddq
Typical
Minimum
Maximum
2.5V
2.4V
2.6V
The above characteristics are specified under best, worst and normal process variation/conditions
- 42 -
Rev. 1.7 (Jan. 2003)