K4N26323AE Datasheet, PDF (40/52 Pages) Samsung semiconductor – 128Mbit GDDR2 SDRAM

K4N26323AE-GC
128M GDDR2 SDRAM
Voltage (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
Typical
0.0
4.4
8.1
11.2
13.8
15.9
17.4
18.4
19.0
19.4
19.7
19.8
20.0
20.1
20.2
20.2
20.3
20.4
20.4
20.5
Pulldown Current (mA)
Minimum
0.0
3.0
5.5
7.6
9.3
10.6
11.5
12.1
12.4
12.6
12.8
12.9
13.0
13.1
13.1
13.2
13.2
13.3
13.3
13.5
Maximum
0.0
6.3
11.8
16.4
20.4
23.5
25.9
27.5
28.4
29.0
29.3
29.5
29.7
29.9
30.0
30.1
30.2
30.3
30.3
30.4
Typical
0.0
-3.6
-6.9
-9.7
-12.2
-14.3
-16.1
-17.4
-18.4
-19.1
-19.7
-20.3
-20.7
-21.1
-21.5
-21.8
-22.1
-22.4
-22.6
-22.9
Pullup Current (mA)
Minimum
0.0
-2.5
-4.6
-6.6
-8.2
-9.6
-10.7
-11.6
-12.3
-12.8
-13.2
-13.6
-13.9
-14.2
-14.5
-14.7
-14.9
-15.1
-15.3
-15.5
Maximum
0.0
-4.9
-9.3
-13.3
-17.0
-20.1
-22.7
-24.6
-26.0
-27.1
-28.0
-28.7
-29.3
-29.8
-30.3
-30.7
-31.1
-31.4
-31.8
-32.1
Temperature (Tj)
Typical 50 °C
Minimum 100 °C
Maximum 0 °C
Vdd/Vddq
Typical
Minimum
Maximum
2.5V
2.4V
2.6V
The above characteristics are specified under best, worst and normal process variation/conditions
- 40 -
Rev. 1.7 (Jan. 2003)