K4N26323AE Datasheet, PDF (43/52 Pages) Samsung semiconductor – 128Mbit GDDR2 SDRAM

K4N26323AE-GC
128M GDDR2 SDRAM
30 ohm Driver @ODT 120 ohm Fix.
1. The typical pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The 30 ohm@ODT 120 ohm Fix variation in driver pulldown current from minimum to maximum process, temperature and voltage
will lie within the outer bounding lines the of the V-I curve of Figure a.
50
Maximum
40
30
Typical
Minimum
20
10
0
-10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
Figure a : Pulldown Charateristics
Vout(V)
3. The typical pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The 30 ohm@ODT 120 ohm Fix variation pullup current from minimum to maximum process, temperature and voltage will lie
within the outer bounding lines of the V-I curve of Figrue b.
10
0
-10
-20
-30
-40
-50
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
Minumum
Typical
Maximum
Figure b : PulluP Charateristics
Vout(V)
5. The 30 ohm@ODT 120 ohm fix variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7,
for device drain to source voltage from 0 to VDDQ/2
6. The 30 ohm@ODT 120 ohm fix variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device
drain to source voltages from 0 to VDDQ/2
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Rev. 1.7 (Jan. 2003)