K4N26323AE Datasheet, PDF (37/52 Pages) Samsung semiconductor – 128Mbit GDDR2 SDRAM

K4N26323AE-GC
128M GDDR2 SDRAM
AC CHARACTERISTICS (I)
Parameter
Symbol
-20 (GF1000)
Min
Max
-22 (GF900)
Min
Max
-25 (GF800)
Min
Max
Unit
Row cycle time
tRC
22
-
21
-
18
-
tCK
Refresh row cycle time
tRFC
27
-
25
-
22
-
tCK
Row active time
tRAS
15
100K
14
100K
12
100K
tCK
RAS to CAS delay for Read
tRCDRD
8
-
8
-
7
-
tCK
RAS to CAS delay for Write
tRCDWR
5
-
5
-
4
-
tCK
Row precharge time
tRP
7
-
7
-
6
-
tCK
Row active to Row active
tRRD
5
-
5
-
4
-
tCK
Last data in to Row precharge
tWR
5
-
5
-
4
-
tCK
Last data in to Read command tCDLR
4
-
4
-
4
-
tCK
Col. address to Col. address
tCCD
2
-
2
-
2
-
tCK
Mode register set cycle time
tMRD
4
-
4
-
4
-
tCK
Auto precharge write recovery +
Precharge
tDAL
12
-
12
-
10
-
tCK
Exit self refresh to any command tXSA
20000
-
20000
-
20000
-
tCK
Power down exit time
tPDEX 4tCK+tIS
-
4tCK+tIS
-
4tCK+tIS
-
ns
Refresh interval time
tREF
7.8
-
7.8
-
7.8
-
us
Note : 1. For normal write operation, even numbers of Din are to be written inside DRAM
- 37 -
Rev. 1.7 (Jan. 2003)