K4N26323AE Datasheet, PDF (34/52 Pages) Samsung semiconductor – 128Mbit GDDR2 SDRAM

K4N26323AE-GC
128M GDDR2 SDRAM
AC OPERATING TEST CONDITIONS (VDD=2.5V±0.1V, Tj= 0 to 100 °C)
Parameter
Input reference voltage for CK(for single)
CK and CK signal maximum peak swing
CK signal minimum slew rate
Input Levels(VIH/VIL)
Input timing measurement reference level
Output timing measurement reference level
Output load condition
Value
0.50*VDDQ
1.5
1.0
VREF+0.25/VREF-0.25
VREF
1/2 VDDQ
See Fig.1
Unit
V
V
V/ns
V
V
V
Note
Output
Z0=60Ω
CLOAD=10pF
VREF
=0.5*VDDQ
(Fig. 1) Output Load Circuit
CAPACITANCE (VDD=2.5V, TA= 25°C, f=1MHz)
Parameter
Input capacitance ( CK, CK )
Input capacitance (A0~A10, BA0~BA1)
Input capacitance
( CKE, CS, RAS,CAS, WE )
Data & DQS input/output capacitance(DQ0~DQ31)
Input capacitance(DM0 ~ DM3)
Symbol
CIN1
CIN2
CIN3
COUT
CIN4
Min
3.0
3.0
3.0
3.0
3.0
Max
5
5
5
5
5
Unit
pF
pF
pF
pF
pF
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Rev. 1.7 (Jan. 2003)