K4N26323AE Datasheet, PDF (48/52 Pages) Samsung semiconductor – 128Mbit GDDR2 SDRAM

K4N26323AE-GC
128M GDDR2 SDRAM
Voltage (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
Typical
-7.3
-3.7
-0.5
2.4
4.8
7.0
8.8
10.2
11.4
12.5
13.5
14.4
15.4
16.3
17.1
18.0
18.9
19.8
20.6
21.5
Pulldown Current (mA)
Minimum
-5.8
-3.2
-0.9
1.2
2.9
4.4
5.7
6.8
7.7
8.6
9.4
10.7
10.9
11.6
12.4
13.1
13.8
14.6
15.3
16.0
Maximum
-8.6
-3.7
0.7
4.6
8.0
11.0
13.5
15.4
16.9
18.2
19.3
20.5
21.5
22.6
23.6
24.6
25.6
26.6
27.6
28.6
Typical
7.6
4.6
1.8
-0.8
-3.2
-5.3
-7.1
-8.8
-10.2
-11.5
-12.7
-13.9
-15.0
-16.0
-17.1
-18.1
-19.1
-20.1
-21.1
-22.1
Pullup Current (mA)
Minimum
6.1
3.9
1.9
0.0
-1.7
-3.2
-4.6
-5.8
-7.0
-8.0
-9.0
-9.9
-10.8
-11.7
-12.5
-13.4
-14.2
-15.0
-15.8
-16.7
Maximum
9.2
5.3
1.6
-1.8
-4.9
-7.8
-10.3
-12.4
-14.2
-15.8
-17.3
-18.6
-19.9
-21.2
-22.4
-23.7
-24.8
-16.0
-27.2
-28.3
Temperature (Tj)
Typical
Minimum
Maximum
50 °C
100 °C
0 °C
Vdd/Vddq
Typical
Minimum
Maximum
2.5V
2.4V
2.6V
The above characteristics are specified under best, worst and normal process variation/conditions
- 48 -
Rev. 1.7 (Jan. 2003)