K4N26323AE Datasheet, PDF (49/52 Pages) Samsung semiconductor – 128Mbit GDDR2 SDRAM

K4N26323AE-GC
128M GDDR2 SDRAM
60 ohm @ODT OFF
1. The typical pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.
2. The 60 ohm@ODT OFF variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie
within the outer bounding lines the of the V-I curve of Figure a.
16
14
12
10
8
6
4
2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
Maximum
Typical
Minimum
Figure a : Pulldown Charateristics
Vout(V)
3. The typical pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.
4. The 60 ohm@ODT OFF variation in drive pullup current from minimum to maximum process, temperature and voltage will lie
within the outer bounding lines of the V-I curve of Figrue b.
0
-2
-4
-6
Minumum
-8
-10
Typical
-12
-14
-16
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
Maximum
Vout(V)
Figure b : PulluP Charateristics
5. The 60 ohm@ODT OFF variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for
device drain to source voltage from 0 to VDDQ/2
6. The 60 ohm@ODT OFF variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to
source voltages from 0 to VDDQ/2
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Rev. 1.7 (Jan. 2003)